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| Datasheet File OCR Text: |
| NTE81 Silicon NPN Transistor Dual Differential Amp, General Purpose Switch Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Total Device Dissipation (TA = +25C), PD One Die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 575mW All Die Equal Power . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW Derate Above 25C One Die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.29mW/C All Die Equal Power . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.57mW/C Total Device Dissipation (TC = +25C), PD One Die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.8W All Die Equal Power . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5W Derate Above 25C One Die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10.3mW/C All Die Equal Power . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14.3mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Thermal Resistance, Junction-to-Case, RJC One Die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 97C/W All Die Equal Power . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70C/W Thermal Resistance, Junction-to-Ambient (Note 1), RthJA One Die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 304C/W All Die Equal Power . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 280C/W Coupling Factors Q1 - Q2 Junction-to-Ambient . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57% Junction-to-Case . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0% Q1 - Q3 or Q1 - Q4 Junction-to-Ambient . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55% Junction-to-Case . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0% Note 1. RthJA is measured with the device soldered into a typical printed circuit board. Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter OFF Characteristics Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current ON Characteristics (Note 2) DC Current Gain hFE IC = 0.1mA, VCE = 10V IC = 1.0mA, VCE = 10V IC = 10mA, VCE = 10V IC = 150mA, VCE = 1.0V IC = 150mA, VCE = 10V IC = 300mA, VCE = 10V Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Small-Signal Characteristics Current Gain-Bandwidth Product Output Capacitance Input Capacitance Switching Characteristics Delay Time Rise Time Storage Time Fall Time td tr ts tf VCC = 30V, IC = 150mA, VBE(off) = 0.5V, IB1 = 15mA VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA - - - - - - - - 15 30 250 60 s s s s fT Cobo Cibo IC = 20mA, VCE = 20V, f = 100MHz VCB = 10V, IE = 0, f = 100kHz VEB = 0.5V, IC = 0, f = 100kHz 200 - - 250 3.5 15 - 8.0 20 MHz pF pF VCE(sat) VBE(sat) IC = 150mA, IB = 15mA IC = 300mA, IB = 30mA IC = 150mA, IB = 15mA IC = 300mA, IB = 30mA 20 25 35 20 40 25 - - 0.6 - 50 55 65 65 30 75 0.2 0.35 0.95 - - - - - 120 - 0.4 1.2 1.3 2.0 V V V V V(BR)CEO IC = 10mA, IB = 0, Note 2 V(BR)CBO IC = 10A, IE = 0 V(BR)EBO IE = 10A, IC = 0 ICEV IBL VCE = 50V, VBE(off) = 3V VCE = 50V, VEB(off) = 3V 30 60 5 15 30 - - - - - - - - - - V V V nA nA Symbol Test Conditions Min Typ Max Unit Note 2. Pulse Test: Pulse Width 300s, Duty Cycle 2%. .370 (9.39) Dia Max .335 (8.52) Dia Max .200 (5.08) .500 (12.7) Min .019 (0.48) Dia Typ 3 .200 (5.06) Dia 2 1 5 45 7 6 .031 (.792) Pin4 and Pin8 Omitted Pin 1. 2. 3. 5. 6. 7. C1 B1 E1 E2 B2 C2 |
Price & Availability of NTE81
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